Seminar 1: Engineering Education and Research in USA.
Seminar 2: Wide Bandgap Materials for Power Devices and Systems.
报告人：Professor Mohammad A. Matin
邀请人：自动化研究所 王建辉 教授
电气自动化研究所 张化光 教授
Mohammad Matin did BS (Honors) and MS in Applied Physics and Electronics with First Class from Dhaka University, Bangladesh and PhD in Electrical & Electronics Engineering from Nottingham University in England in 1993. He then joined as post-doctoral fellow (94-95), Research Engineer (95-98) at the Center for Electrophotonics Materials and Devices, McMaster University, Hamilton Canada. He moved to the University of Toronto, Canada as Senior Research Associate (1998-2000). In March 2000 he joined as an Assistant Professor of Electrical Engineering, in the School of Engineering and Computer Science, University of Denver and Promoted to Associate Professor with tenured in the fall of 2006. He is a senior Member of IEEE, OSA & SPIE. His research interest is in Photonics Materials, Devices and Systems. Wide Bandgap Materials, Devices and Systems
Seminar 1 Abstract:
The diversity in the USA is reflected in various aspects of the society, such as the education. Every year, the US government addresses a lot on the basic education and universities, making the USA a power country in education. The speaker has plenty of experience in studying, teaching and researching in foreign countries, including England, Canada and the USA. This talk will give a comprehensive discussion about the education and research methodology, especially in the area of engineering education in the United States.
Seminar 2 Abstract:
Producing clean energy is being vigorously pursued worldwide. One of the most promising approaches to producing clean energy is utilizing photovoltaic technology, however, while a various of activities are performed in the photovoltaic area, there seems to be much less activity in related areas, making it possible to reduce the overall cost of delivering clean energy and improving system efficiency. Reducing cost requires technological advancement in variety of areas such as solar cells, inverter electronics, power management, storage, and smart grid. This talk is intended to focus on power electronics devices based on wide-bandgap (WBG) materials. Wide-bandgap semiconductors are materials that possess bandgaps significantly greater than those of silicon. An example of successful WBG materials includes, but not limited to, Gallium nitride (GaN), Silicon Carbide (SiC) and Diamond (C) based material. Device technologies based on such material platforms promises to deliver cost-effective performance that is many orders of magnitude better than the current Si devices.
Recent improvements in the performance and reliability of WBG materials and devices make it a promising technology to consider for power circuits and clean energy applications. WBG enable power electronic components to be smaller, cheaper, faster, more reliable and efficient than their silicon-based counterparts. It is expected that new research on WBG material will spur innovations in the next generation of clean energy power electronics, alternate energy vehicles and smart grid technology.